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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0420
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 4.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * 16.0 dBm Typical P1 dB at 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Metal/Beryllia Microstrip Package
high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
200 mil BeO Package
Description
The MSA-0420 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic,
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 6.3 V
2
5965-9574E
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MSA-0420 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 120 mA 850 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 40C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 25 mW/C for TC > 166C. 4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 90 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz
Units
dB dB GHz
Min.
7.5
Typ.
8.5 0.6 4.3 1.7:1 1.8:1
Max.
9.5 1.0
dB dBm dBm psec V mV/C 5.7 14.0
6.5 16.0 30.0 140 6.3 -8.0 6.9
Note: 1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following page.
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MSA-0420 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 90 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
.25 .25 .24 .22 .21 .20 .14 .10 .08 .10 .13 .14 .14 .16
177 173 167 160 154 148 136 136 161 178 176 163 133 91
8.6 8.6 8.6 8.5 8.5 8.3 8.1 7.9 7.4 7.0 6.6 5.9 5.3 4.5
2.70 2.69 2.69 2.67 2.66 2.60 2.54 2.48 2.34 2.24 2.13 1.97 1.83 1.69
175 170 159 149 139 129 104 80 62 39 18 -3 -23 -343
-16.4 -16.5 -16.5 -16.4 -16.3 -16.1 -15.6 -14.8 -14.3 -13.7 -12.6 -11.9 -11.3 -10.5
.151 .150 .150 .152 .154 .156 .166 .181 .193 .206 .233 .253 .273 .299
1 1 -1 -2 -2 -3 -4 -6 -5 -11 -18 -25 -33 -43
.03 .04 .07 .10 .13 .16 .22 .25 .28 .31 .34 .36 .37 .37
-30 -59 -79 -92 -99 -109 -124 -139 -147 -157 -167 -176 174 162
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
12 10 8 Gain Flat to DC 6 4 2 0 20 5 0.1 GHz 1.0 GHz 2.0 GHz 30 50 70 90 110 100 TC = +125C TC = +25C 80 T = -25C C 9
8
G p (dB)
I d (mA)
40
G p (dB)
0 2 4 Vd (V) 6 8
60
7
6
0.1
0.3 0.5
1.0
3.0
6.0
0
4
FREQUENCY (GHz)
I d (mA)
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 90 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
18
24 P1 dB 21
7.5 I d = 110 mA I d = 30 mA 7.0 I d = 90 mA Id= 60 mA
P1 dB (dBm)
16 14
I d = 110 mA I d = 90 mA
9
9 GP 8
NF (dB)
12
P1 dB (dBm)
18 15 12 9 6 0.1
6.5
G p (dB)
8 7 6 5 -55
NF (dB)
I d = 60 mA I d = 30 mA 6.0
7 NF -25 +25 +85 6 5 +125
5.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz)
TEMPERATURE (C)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=90mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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200 mil BeO Package Dimensions
4 .300 .025 7.62 .64 45 1 RF INPUT NO REFERENCE GROUND .060 1.52 .048 .010 1.21 .25 2 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .004 .002 .10 .05 GROUND .030 .76
.128 3.25
.205 5.21
.023 .57
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